Process for producing a field-effect transistor and transistor thus obtained
US7229867B2 · kind B2 · utility
3Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2005 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
A substrate supporting a portion of a semiconductor material is used to produce a field-effect transistor. A portion of a temporary material lies between the portion of semiconductor material and the substrate. A gate is formed, which comprises an upper part in rigid connection with the portion of semiconductor material, and at least one bearing part settled on the substrate. The temporary material is removed and replaced with an electrically insulating material. During removal and replacement of the temporary material, the portion of semiconductor material is held in place relative to the substrate by the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.