Method to reduce photoresist pattern collapse by controlled surface microroughening
US7229936B2 · kind B2 · utility
4Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Jan 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for preparing a substrate for photolithographic patterning. The method includes providing a substrate having at least an exposed rough surface layer including a polymeric material. The rough surface layer has surface features characterized by feature step height varying between about two percent and twenty percent of the minimum photolithographic half-pitch. A layer of photoresist material is then provided over the exposed rough surface layer and patterned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.