Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
US7230258B2 · kind B2 · utility
27Cited by
8References
1Claims
0Family size
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Key dates
| Filing date | Jul 24, 2003 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Mar 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.