Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions
US7230310B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2002 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Sep 24, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor power device includes a device feature layer, a substrate contact layer and a voltage-sustaining layer between them. The voltage-sustaining layer includes alternating semiconductor and high permittivity dielectric regions, where each region extends from the device feature layer to the substrate contact layer. Due to the flux of charges transported dominantly through the dielectric regions, the whole voltage-sustaining layer behaves like a semiconductor having a much higher electric permittivity than that of the semiconductor itself, so that the field produced by the ionized impurities of the semiconductor regions can be much higher than that of the conventional one for sustaining the same reverse voltage, and the specific on-resistance can be lower than that of the conventional one. The use of high permittivity dielectric regions can also be applied to the charge-balance structure, i.e., to COOLMOST.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.