System and method for using plasma to adjust the resistance of thin film resistors
US7230517B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Mar 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method is disclosed for using plasma to adjust the resistance of a thin film resistor. In one advantageous embodiment of the invention, the resistance of a thin film resistor is increased to cause the thin film resistor to have a desired higher value of resistance. The thin film resistor is formed having an initial value of resistance that is less than the desired value of resistance. Then the thin film resistor is placed in an oxidizing atmosphere. A surface of the thin film resistor is then oxidized to increase the initial value of resistance to the desired value of resistance. The amount of the increase in resistance may be selected by selecting the temperature of the oxidizing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.