Method of making a multibit non-volatile memory
US7232722B2 · kind B2 · utility
9Cited by
12References
21Claims
0Family size
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Key dates
| Filing date | Jan 20, 2005 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jan 20, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0458
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of making a multibit non-volatile memory and especially to a method of making a flash memory such as a fast-programmable Flash EEPROM (Electrically Erasable Programmable Read-Only Memory) device relying on hot-electron injection for programming which is particularly suited for high density low-voltage low-power applications and employs only two polysilicon layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.