Trench-gate semiconductor device and method of manufacturing
US7232726B2 · kind B2 · utility
13Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2003 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Apr 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
Consistent with an example embodiment a trench-gate semiconductor device, for example a MOSFET or IGBT, having a field plate provided below the trenched gate is manufactured using a process with improved reproducibility. The process includes the steps of etching a first grove into the semiconductor body for receiving the gate, and etching a second groove into the top major surface of the semiconductor body, the second groove extending from the first groove and being narrower than the first groove. The invention enables better control of the vertical extent of the gate below the top major surface of the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.