BARC/resist via etchback process
US7232748B2 · kind B2 · utility
6Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 22, 2004 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jul 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A BARC or other sacrificial fill layer etch comprises a selective etch chemistry of Ar/O2/CO. The BARC etch may be used in a via-first dual damascene method. After via (116) pattern and etch, a BARC/sacrificial fill layer (120) is deposited to fill the via (116) and coat the IMD (110). The excess sacrificial fill layer (120) material over the IMD (110) is removed using the Ar/O2/CO etch. A trench resist pattern (125) is formed over the BARC layer (120). During the main trench etch, portions of sacrificial fill layer (120) remain in the via to protect the etch-stop (104) at the bottom of the via (116).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.