Vertical power semiconductor component

US7233031B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Anton Mauder · Kolbermoor, DE
• Holger Rüthing · Birkenfeld, DE
• Gerhard Miller · Landsberg am Lech, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Josef Bauer · Munich, DE
• Elmar Falck · Hohenbrunn, DE

Key dates

• Filing date: Jul 7, 2004
• Grant date: Jun 19, 2007
• Expiry date: Oct 24, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/252

Abstract

A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.