MEMS device trench plating process and apparatus for through hole vias
US7233048B2 · kind B2 · utility
12Cited by
8References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2005 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Nov 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming through hole vias in a substrate uses a partially exposed seed layer to plate the bottom of a blind trench formed in the front side of a substrate. Thereafter, the plating proceeds substantially uniformly from the bottom of the blind hole to the top. To form the through hole, the rear face of the substrate is ground or etched away to remove material up to and including the dead-end wall of the blind hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.