Phase change material and non-volatile memory device using the same
US7233054B1 · kind B1 · utility
22Cited by
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9Claims
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Key dates
| Filing date | Nov 29, 2005 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Nov 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.