Thin film magnetic memory device provided with a dummy cell for data read reference
US7233537B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 1, 2002 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jan 27, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2281
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Normal memory cells and dummy cells are arranged continuously in a memory array. In a data read operation, first and second data lines are connected to the selected memory cell and the dummy cell, respectively, and are supplied with operation currents of a differential amplifier. An offset corresponding to a voltage difference between first and second offset control voltages applied from voltage generating circuits are provided between passing currents of the first and second data lines, and a reference current passing through the dummy cell is set to a level intermediate between two kinds of levels corresponding to storage data of a data read current passing through the selected memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.