Chemical mechanical polishing method, chemical mechanical polishing system, and manufacturing method of semiconductor device
US7234998B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2005 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Aug 4, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/03
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Setting a polishing rate and a polishing time in chemical mechanical polishing can be performed with high accuracy by considering a product wafer of an object to be polished, and an instrumental error between apparatuses to be used, etc. By using, as a calculating formula, a formula well approximating a portion of a curve representing a state of chemical mechanical polishing on a side showing a target polishing amount, the polishing rate and the polishing time can be set with high accuracy according to a state of chemical mechanical polishing for actually polishing a product wafer. In the calculating formula, a parameter “A” relating to a film property of a film of an object to be polished, a parameter “B” relating to a roughness state of a film surface, and a parameter “C” relating to an instrumental error differential between apparatuses of a chemical mechanical polishing apparatus are joined by operators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.