Methods for fabricating a substrate
US7235462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2004 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Aug 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for fabricating a substrate for optics, electronics, or opto-electronics. This method includes the steps of implanting atomic species into a face of a source substrate to form a weakened zone therein corresponding to the depth of penetration of the atomic species; transferring the seed layer on to a support substrate by bonding a face of the support substrate to the face of the source substrate and detaching the seed layer from the source substrate; depositing a working layer on the seed layer to form a composite substrate comprising the support substrate, seed layer and working layer; and detaching the seed layer and the working layer from the support substrate to form a substrate. Advantageously, the support substrate comprises a material having a thermal expansion value of about 0.7 to 3 times the coefficient value of the working layer, and the seed layer includes a crystal lattice parameter sufficient for the epitaxial growth of the working layer onto the seed layer such that the working layer has a dislocation concentration of less than about 107/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.