Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth
US7235483B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 19, 2002 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Nov 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/288
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected material on the surface of the treated object in the first stage under first temperature-controlled conditions for the formation of nuclei of said selected material, converting the nuclei of the aforementioned selected material into island-structured deposited layer of said material by causing lateral growth of the nuclei under second temperature-controlled conditions; converting the island-structure layer into a continuously interconnected cluster structure by causing further lateral growth of said island-structured deposited layer under third temperature-controlled conditions; forming a first continuous film of said material under fourth temperature controlled conditions which provides said first continuous film with predetermined properties; and then completing the formation of a final coating film by growing at least one subsequent continuous film of said material under fifth temperature-controlled conditions until a f…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.