Method of manufacturing semiconductor device
US7235485B2 · kind B2 · utility
15Cited by
7References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 14, 2005 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Oct 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device with enhanced electrical characteristics. The method includes disposing a substrate on a substrate support in a process chamber, pre-heating the substrate on the substrate support adjusted to a temperature from 300 to 400° C. for 60 seconds or more, forming a silicon protective layer on the substrate by supplying a silicon source gas into the process chamber and heating the substrate on the substrate support adjusted to a temperature from 300 to 400° C. for 10 seconds or more, and forming a tungsten layer on the silicon protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.