Roland Hampp
15Patents
3h-index
14Co-inventors
53Inventor score
Filing activity: Oct 14, 2005 → Dec 9, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7235485B2 | Method of manufacturing semiconductor device | Electricity | 15 | Expired |
| US8643126B2 | Self aligned silicided contacts | Electricity | 5 | Active |
| US8361879B2 | Stress-inducing structures, methods, and materials | Electricity | 4 | Active |
| US9653543B2 | Methods of fabricating isolation regions of semiconductor devices and structures thereof | Electricity | 3 | Active |
| US7795107B2 | Method for forming isolation structures | Electricity | 3 | Active |
| US8936995B2 | Methods of fabricating isolation regions of semiconductor devices and structures thereof | Electricity | 3 | Active |
| US8159038B2 | Self aligned silicided contacts | Electricity | 2 | Active |
| US8187962B2 | Self aligned silicided contacts | Electricity | 2 | Active |
| US9006898B2 | Conductive lines and pads and method of manufacturing thereof | Electricity | 2 | Active |
| US7615840B2 | Device performance improvement using flowfill as material for isolation structures | Electricity | 1 | Active |
| US8907444B2 | Stress-inducing structures, methods, and materials | Electricity | 1 | Active |
| US7892939B2 | Threshold voltage consistency and effective width in same-substrate device groups | Electricity | 0 | Active |
| US8586472B2 | Conductive lines and pads and method of manufacturing thereof | Electricity | 0 | Active |
| US9373717B2 | Stress-inducing structures, methods, and materials | Electricity | 0 | Active |
| US7947606B2 | Methods of forming conductive features and structures thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.