Group III-nitride light emitting device
US7235820B2 · kind B2 · utility
7Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Dec 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.