Jae Ro
3Patents
2h-index
8Co-inventors
30Inventor score
Filing activity: Dec 23, 2005 → Nov 13, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8361816B2 | Method of manufacturing vertical gallium nitride based light emitting diode | Electricity | 20 | Active |
| US7235820B2 | Group III-nitride light emitting device | Electricity | 7 | Expired |
| US8492912B2 | Light emitting diode package | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.