Patent · US Expired

Precharge arrangement for read access for integrated nonvolatile memories

US7236403B2 · kind B2 · utility

6Cited by

5References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christoph Deml · Munich, DE
Thomas Liebermann · Munich, DE
Edvin Paparisto · Munich, DE
Stephan Rogl · Vilsheim, DE

Key dates

Filing date	Dec 7, 2004
Grant date	Jun 26, 2007
Priority date	—
Expiry date	Dec 7, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/24
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Precharge arrangement for read access for integrated nonvolatile memories having at least one memory cell (2), at least one source line (8), at least one bit line (9), at least one sense amplifier (3) and at least one precharge potential, the bit line (9) continuously having the precharge potential in a deselected state of the bit line (9), and the source line (8) having a predetermined reference potential, in particular a ground potential (10), in a selected state of the bit line (9).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.