Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface
US7238294B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 2, 2003 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Feb 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention refers to a procedure for etching of materials at the surface by focussed electron beam induced chemical reactions at said surface. The invention is characterized in that in a vacuum atmosphere the material which is to be etched is irradiated with at least one beam of molecules, at least one beam of photons and at least one beam of electrons, whereby the irradiated material and the molecules of the beam of molecules are excited in a way that a chemical reaction predetermined by said material and said molecules composition takes place and forms a reaction product and said reaction product is removed from the material surface-irradiation and removal step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.