Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element
US7238598B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2003 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Feb 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor substrate that can be dismantled, comprising the following steps: introduction of gaseous species in the substrate according to conditions enabling the constitution of an embrittled layer by the presence in said layer of micro-cavities and/or micro-bubbles, a thin layer of semiconductor material thus being delimited between the embrittled layer and one face of the substrate, thermal treatment of the substrate to increase the brittleness level of the embrittled layer, said thermal treatment being continued until the appearance of local deformations on said face of the substrate in the form of blisters but without generating exfoliations of the thin layer during this step and during the continuation of the method, epitaxy of semiconductor material on said face of the substrate to provide at least one epitaxial layer on said thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.