Forming thin hard mask over air gap or porous dielectric
US7238604B2 · kind B2 · utility
32Cited by
18References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | May 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially porous material that may be later densified. The thin hard mask may be used to prevent etch steps used in forming an unlanded via from reaching layers below the hard mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.