Memory cell, method for the production thereof and use of a composition therefor

US7238964B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Andreas Walter · Egloffstein, DE
• Recai Sezi · Simmerath, DE
• Reimund Engl · Munich, DE
• Anna Maltenberger · Leutenbach, DE
• Joerg Schumann · Dresden, DE
• Thomas Weitz · Bad Dürkheim, DE

Key dates

• Filing date: Jan 27, 2005
• Grant date: Jul 3, 2007
• Expiry date: Dec 31, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K19/00
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A memory cell is provided which comprises two electrodes and a layer arranged in between and comprising an active material comprising in which R1 and R4, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, in which R1 and R2, R2 and R3, R3 and R4 together may form a ring, in which R5 to R7, independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH2, —N(alkyl)2, —N(aryl)2, —N(heteroaryl)2, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO2, A method for the production of the cells according to the invention and the novel use of a composition which can be used as active material for the memory cells are furthermore provided.