Semiconductor device and method of producing a semiconductor device

US7238974B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Matthias Strassburg · Erlangen, DE
• Stephan Riedel · Frankfurt am Main, DE

Key dates

• Filing date: Oct 29, 2004
• Grant date: Jul 3, 2007
• Expiry date: Nov 4, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/30

Abstract

A semiconductor device comprises a memory cell (160) including a transistor body (150) having a top surface (111) and including a first doping area (10a) and a second doping area (10b) with a channel region (110) in between. The memory cell (160) further includes a gate electrode (3a) arranged above the channel region (110) and separated therefrom by a dielectric layer (2a). An oxide-nitride-oxide layer (66) has first portions (661) and second portions (662). The first portions (661) of the oxide-nitride-oxide layer (66) are arranged above at least parts of the first and second doping areas (10a, 10b) and are substantially parallel to the top surface (111) of the transistor body (150). The second portions (662) of the oxide-nitride-oxide layer (66) are adjacent to the gate electrode (3a) and extend in a direction not substantially parallel to the top surface (111) of the transistor body (150).