Schottky barrier rectifier and method of manufacturing the same
US7238976B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jun 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a second doped region and a plurality of third doped regions. The second doped region is disposed between the first doped region and the first conductive layer. The plurality of third doped regions are disposed in the second doped region. The first doped region of the semiconductor is heavily doped with a first type of dopant (e.g., phosphorous or arsenic). The second doped region is moderately doped with the first type of dopant. The plurality of third doped regions are moderately to heavily doped with a second type of dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.