QSpeed Semiconductor Inc.
15Patents
3Active
15Granted
34Portfolio score
Filing activity: May 29, 2002 → Apr 16, 2007 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7417266B1 | MOSFET having a JFET embedded as a body diode | Electricity | 25 | Expired |
| US7348826B1 | Composite field effect transistor | Electricity | 23 | Expired |
| US7746156B1 | Circuit and method for driving a junction field effect transistor | Electricity | 21 | Active |
| US7696598B2 | Ultrafast recovery diode | Electricity | 19 | Expired |
| US7696540B2 | Structure and method for a fast recovery rectifier structure | Electricity | 19 | Active |
| US7220661B1 | Method of manufacturing a Schottky barrier rectifier | Electricity | 18 | Expired |
| US7211845B1 | Multiple doped channel in a multiple doped gate junction field effect transistor | Electricity | 14 | Expired |
| US7227242B1 | Structure and method for enhanced performance in semiconductor substrates | Electricity | 13 | Expired |
| US7238976B1 | Schottky barrier rectifier and method of manufacturing the same | Electricity | 10 | Expired |
| US7452763B1 | Method for a junction field effect transistor with reduced gate capacitance | Electricity | 9 | Expired |
| US7268378B1 | Structure for reduced gate capacitance in a JFET | Electricity | 8 | Expired |
| US7655964B1 | Programmable junction field effect transistor and method for programming same | Electricity | 8 | Expired |
| US7262461B1 | JFET and MESFET structures for low voltage, high current and high frequency applications | Electricity | 7 | Expired |
| US7265398B1 | Method and structure for composite trench fill | Electricity | 7 | Expired |
| US7608888B1 | Field effect transistor | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.