Robust DEMOS transistors and method for making the same
US7238986B2 · kind B2 · utility
16Cited by
17References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2004 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Oct 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
Extended-drain MOS transistor devices and fabrication methods are provided, in which a drift region of a first conductivity type is formed between a drain of the first conductivity type and a channel. The drift region comprises first and second portions, the first portion extending partially under a gate structure between the channel and the second portion, and the second portion extending laterally between the first portion and the drain, wherein the first portion of the drift region has a concentration of first type dopants higher than the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.