Method of hot electron injection programming of a non-volatile memory (NVM) cell array in a single cycle
US7239558B1 · kind B1 · utility
13Cited by
8References
14Claims
0Family size
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Key dates
| Filing date | Sep 26, 2005 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0441
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory (NVM) cell splits its basic functions, i.e. program, erase, read and control, among a four PMOS transistor structure, allowing independent optimization of each cell function. The cell structure also includes an embedded static random access memory (SRAM) cell that utilizes a latch structure to preprogram data to be written to the cell and a plurality of cascoded NMOS pass gates. The cell structure reduces total programming time and provides the flexibility of programming the entire cell array simultaneously or one row or sector of the array at a time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.