Method of manufacturing a magnetoresistance effect element
US7240419B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2004 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | May 6, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/325
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depositing a ferromagnetic material to form a second ferromagnetic layer overlying the insulating layer which buries the aperture. The aperture can have an opening width not larger than 20 nm. A current flowing between the first ferromagnetic layer and the needle can be monitored, and thrusting of the needle can be interrupted when the current reaches a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.