Hafnium silicide target for gate oxide film formation and its production method
US7241368B2 · kind B2 · utility
9Cited by
6References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 5, 2002 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Oct 6, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi0.05-0.37. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film, and the manufacturing method thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.