Nippon Mining & Metals Co., Ltd.
165Patents
58Active
165Granted
47Portfolio score
Filing activity: Sep 17, 1991 → Sep 11, 2009 · 58 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5224534A | Method of producing refractory metal or alloy materials | Mechanical Engineering; Lighting; Heating | 24 | Expired |
| US7435325B2 | Method for producing high purity nickle, high purity nickle, sputtering target comprising the high purity nickel, and thin film formed by using said spattering target | Emerging Cross-Sectional Technologies | 23 | Expired |
| US7156963B2 | Tantalum sputtering target and method for preparation thereof | Emerging Cross-Sectional Technologies | 20 | Expired |
| US7510635B2 | High purity zinc oxide powder and method for production thereof, and high purity zinc oxide target and thin film of high purity zinc oxide | Chemistry; Metallurgy | 18 | Expired |
| US7393395B2 | Surface-treating agent for metal | Electricity | 18 | Expired |
| US6197433A | Rolled copper foil for flexible printed circuit and method of manufacturing the same | Emerging Cross-Sectional Technologies | 17 | Expired |
| US7507304B2 | Copper alloy sputtering target and semiconductor element wiring | Electricity | 16 | Expired |
| US7699965B2 | Zinc oxide-based transparent conductor and sputtering target for forming the transparent conductor | Emerging Cross-Sectional Technologies | 14 | Active |
| US7347353B2 | Method for connecting magnetic substance target to backing plate, and magnetic substance target | Emerging Cross-Sectional Technologies | 14 | Expired |
| US7635440B2 | Sputtering target, thin film for optical information recording medium and process for producing the same | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6613451B1 | Metallic material | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5783057A | Method of purifying copper electrolytic solution | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7716806B2 | Tantalum sputtering target and method for preparation thereof | Emerging Cross-Sectional Technologies | 13 | Active |
| US6093499A | Copper alloy foils | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6403234B1 | Plated material for connectors | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7799301B2 | Cathode material for lithium secondary battery and manufacturing method thereof | Emerging Cross-Sectional Technologies | 12 | Active |
| US7341796B2 | Copper foil having blackened surface or layer | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7740717B2 | Tantalum sputtering target and method for preparation thereof | Emerging Cross-Sectional Technologies | 12 | Active |
| US7217310B2 | Metal powder for powder metallurgy and iron-based sintered compact | Performing Operations; Transporting | 12 | Expired |
| US7740721B2 | Copper alloy sputtering target process for producing the same and semiconductor element wiring | Electricity | 11 | Expired |
| US5680473A | Surface inspection device | Physics | 11 | Expired |
| US7156964B2 | Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target | Electricity | 10 | Expired |
| US7279211B2 | Sputtering target containing zinc sulfide as major component, optical recording medium on which phase change optical disk protective film containing zinc sulfide as major component is formed by using the target, and method for manufacturing the sputtering target | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7699948B2 | Ta sputtering target and method for preparation thereof | Chemistry; Metallurgy | 9 | Expired |
| US7241368B2 | Hafnium silicide target for gate oxide film formation and its production method | Chemistry; Metallurgy | 9 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.