Layered films formed by controlled phase segregation
US7241707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Feb 28, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.