Method of operating a complementary bit resistance memory sensor
US7242603B2 · kind B2 · utility
12Cited by
187References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2005 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Sep 28, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method and apparatus for sensing the resistance state of a programmable resistance memory, using complementary memory elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages discharging through the resistance elements to determine the resistance state of an element being read.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.