Plasma processing method and plasma processing device
US7244625B2 · kind B2 · utility
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1References
4Claims
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Key dates
| Filing date | Feb 18, 2005 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Feb 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32972
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
When plasma ashing is performed on a resist on a wafer, deposit gas containing at least one type of deposit component to be generated from a resist by ashing is added to a gas for plasma generation supplied from a gas supply system for plasma generation, by a deposit gas supply system. By this, the deposit component is actively deposited on the inner surface of a wafer processing chamber so as to protect the inner face of the wafer processing chamber from plasma. As a result, damage of the wafer processing chamber during ashing and particle generation due to the damage are prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.