Semiconductor devices and method for manufacturing the same
US7244972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2004 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Jun 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a field effect transistor, an Si layer 11, an SiC (Si1−yCy) channel layer 12, a CN gate insulating film 13 made of a carbon nitride layer (CN) and a gate electrode 14 are deposited in this order on an Si substrate 10. The thickness of the SiC channel layer 12 is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region 15 and a drain region 16 are formed on opposite sides of the SiC channel layer 12, and a source electrode 17 and a drain electrode 18 are provided on the source region 15 and the drain region 16, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.