EEPROM device with substrate hot-electron injector for low-power programming
US7244976B2 · kind B2 · utility
11Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2005 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Jan 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
A low programming power, high speed EEPROM device is disclosed which is adapted for large scale integration. The device comprises a body, a source, a drain, and it has means for injecting a programming current into the body. The hot carriers from the body enter the floating gate with much higher efficiency than channel current carriers are capable of doing. The drain current of this device is controlled by the body bias. The device is built on an insulator, with a bottom common plate, and a top side body. These features make the device ideal for SOI and thin film technologies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.