Inventor · Somers, NY, US

Jin Cai

85Patents
14h-index
53Co-inventors
83Inventor score

Filing activity: May 10, 2002 → Dec 19, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US7985633B2 Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors Electricity 54 Active
US7700993B2 CMOS EPROM and EEPROM devices and programmable CMOS inverters Electricity 34 Active
US8586441B1 Germanium lateral bipolar junction transistor Electricity 27 Active
US8441084B2 Horizontal polysilicon-germanium heterojunction bipolar transistor Electricity 26 Active
US8705280B2 Electrically programmable floating common gate CMOS device and applications thereof Electricity 22 Active
US8557670B1 SOI lateral bipolar junction transistor having a wide band gap emitter contact Electricity 21 Active
US8572616B2 Apparatus, system, and method for managing z/OS batch jobs with prerequisites Physics 19 Active
US8445356B1 Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate same Electricity 19 Active
US9318585B1 Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown Electricity 18 Active
US9450381B1 Monolithic integrated photonics with lateral bipolar and BiCMOS Electricity 18 Active
US9502504B2 SOI lateral bipolar transistors having surrounding extrinsic base portions Electricity 17 Active
US8415743B2 ETSOI CMOS with back gates Electricity 14 Active
US8558282B1 Germanium lateral bipolar junction transistor Electricity 14 Active
US9263583B2 Integrated finFET-BJT replacement metal gate Electricity 14 Active
US8466473B2 Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs Electricity 14 Active
US6870213B2 EEPROM device with substrate hot-electron injector for low-power Electricity 14 Expired
US9437718B1 Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown Electricity 14 Active
US8901680B2 Graphene pressure sensors Electricity 13 Active
US8852985B2 Graphene pressure sensors Electricity 13 Active
US8980667B2 Charge sensors using inverted lateral bipolar junction transistors Electricity 12 Active
US8530287B2 ETSOI CMOS with back gates Electricity 12 Active
US8531001B2 Complementary bipolar inverter Electricity 12 Active
US7479418B2 Methods of applying substrate bias to SOI CMOS circuits Electricity 11 Expired
US7244976B2 EEPROM device with substrate hot-electron injector for low-power programming Electricity 11 Expired
US8815684B2 Bulk finFET with super steep retrograde well Electricity 11 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.