High frequency power amplifier circuit, high frequency power amplifier electronic component and method thereof
US7245184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2004 |
| Grant date | Jul 17, 2007 |
| Priority date | — |
| Expiry date | Jun 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/665
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high frequency power amplifier electronic component (RF power module) is so constituted as to apply bias to an amplifier FET in current mirror configuration. In this RF power module, deviation of a bias point due to the short channel effect of the FET is corrected, and variation in high frequency power amplifier characteristics reduced. The high frequency power amplifier circuit (RF power module) is so constituted that the bias voltage for the amplifier transistor in a high frequency power amplifier circuit is supplied from a bias transistor connected with the amplifier transistor in current mirror configuration. In addition to a pad (external terminal) connected with the control terminal of the amplifier transistor, a second pad is provided which is connected with the control terminal of the bias transistor connected with the amplifier transistor in current mirror configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.