Method of manufacturing semiconductor device
US7246432B2 · kind B2 · utility
42Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Jun 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes (a) forming a first resin layer on a semiconductor substrate including an electrode pad and a passivation film, (b) curing the first resin layer, (c) forming a second resin layer which slopes more gently than the cured first resin layer on at least a lower portion of the first resin layer, (d) curing the second resin layer to form a resin protrusion including the first and second resin layers, and (e) forming a conductive layer which is electrically connected with the electrode pad and passes over the resin protrusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.