Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques
US7247528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2005 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Feb 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
Abstract
Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A single-crystalline semiconductor plug extends through the inter-layer insulating layer, and a single-crystalline epitaxial semiconductor pattern is in contact with the single-crystalline semiconductor plug on the inter-layer insulating layer. The single-crystalline epitaxial semiconductor pattern is at least partially planarized to form a semiconductor body layer on the inter-layer insulating layer, and the semiconductor body layer is patterned to form a semiconductor body. As a result, the semiconductor body includes at least a portion of the single-crystalline epitaxial semiconductor pattern. Thus, the semiconductor body has an excellent single-crystalline structure. Semiconductor integrated circuits fabricated using the methods are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.