Hoon Lim
32Patents
6h-index
37Co-inventors
69Inventor score
Filing activity: Sep 15, 1999 → Jun 5, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6399451B1 | Semiconductor device having gate spacer containing conductive layer and manufacturing method therefor | Electricity | 23 | Expired |
| US7315466B2 | Semiconductor memory device and method for arranging and manufacturing the same | Electricity | 15 | Expired |
| US7825472B2 | Semiconductor device having a plurality of stacked transistors and method of fabricating the same | Electricity | 14 | Active |
| US7719033B2 | Semiconductor devices having thin film transistors and methods of fabricating the same | Electricity | 14 | Active |
| US7982221B2 | Semiconductor memory device having three dimensional structure | Electricity | 11 | Active |
| US7589992B2 | Semiconductor device having three dimensional structure | Electricity | 6 | Active |
| US7417286B2 | Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same | Electricity | 5 | Expired |
| US7432560B2 | Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same | Electricity | 4 | Expired |
| US7978561B2 | Semiconductor memory devices having vertically-stacked transistors therein | Electricity | 3 | Active |
| US7312110B2 | Methods of fabricating semiconductor devices having thin film transistors | Electricity | 3 | Expired |
| US7994582B2 | Stacked load-less static random access memory device | Electricity | 3 | Active |
| US8154910B2 | Full CMOS SRAM | Electricity | 3 | Active |
| US7141851B2 | Transistors having a recessed channel region | Electricity | 2 | Expired |
| US8291232B2 | Method and a system for a secure execution of workflow tasks of a workflow in a decentralized workflow system | Electricity | 2 | Active |
| US7247528B2 | Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques | Electricity | 2 | Expired |
| US7193276B2 | Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layer | Electricity | 2 | Expired |
| US7405450B2 | Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7592625B2 | Semiconductor transistor with multi-level transistor structure and method of fabricating the same | Emerging Cross-Sectional Technologies | 2 | Active |
| USD733568S1 | Bottle for packaging | General | 1 | Active |
| US10269958B2 | Semiconductor device and method of fabricating the same | Electricity | 1 | Active |
| US7473590B2 | Semiconductor device having body contact through gate and method of fabricating the same | Electricity | 1 | Active |
| US7927932B2 | Semiconductor device having a plurality of stacked transistors and method of fabricating the same | Electricity | 1 | Active |
| US9978865B2 | Semiconductor device and method of fabricating the same | Electricity | 1 | Active |
| US7927734B2 | Lithium secondary battery and fabrication method thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US8799663B2 | Method and a system for a secure execution of workflow tasks of a workflow in a decentralized workflow system | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.