Method of fabricating a field effect transistor having improved junctions
US7247547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2005 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Oct 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a field effect transistor is provided which includes forming an amorphized semiconductor region having a first depth from a single-crystal semiconductor region and subsequently forming a first gate conductor above a channel portion of the amorphized semiconductor region. A first dopant including at least one of an n-type dopant and a p-type dopant is then implanted to a second depth into portions of the amorphized semiconductor region not masked by the first gate conductor to form source/drain portions adjacent to the channel portion. The substrate is then heated to recrystallize the channel portion and the source/drain portions of the amorphized semiconductor region. After the heating step, at least a part of the recrystallized semiconductor region is locally heated to activate a dopant in at least one of the channel portion and the source/drain portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.