CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7247566B2 · kind B2 · utility
10Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2003 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Apr 18, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly relates to a method of polishing substrates comprising copper, tungsten, titanium, and/or polysilicon using a chemical-mechanical polishing system comprising organosulfonic acids having an electrochemical oxidation potential greater than 0.2V as an oxidizer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.