Film forming ring and method of manufacturing semiconductor device
US7247888B2 · kind B2 · utility
3Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2005 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Jul 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming process by using a material gas in a plasma state is applied, and an inner rim of the ring main body being formed higher than its outside portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.