III-nitride material structures including silicon substrates

US7247889B2 · kind B2 · utility

Assignee

• Nitronex Corporation · US

Inventors

• Allen W. Hanson · Cary, US
• John Claassen Roberts · Hillsborough, US
• Edwin L. Piner · Cary, US
• Pradeep Rajagopal · Raleigh, US

Key dates

• Filing date: Dec 3, 2004
• Grant date: Jul 24, 2007
• Expiry date: Aug 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.