Pradeep Rajagopal
18Patents
11h-index
19Co-inventors
65Inventor score
Filing activity: Nov 24, 1998 → Mar 29, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6177688A | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates | Electricity | 475 | Expired |
| US7247889B2 | III-nitride material structures including silicon substrates | Electricity | 55 | Expired |
| US6376339B2 | PENDEOEPITAXIAL METHODS OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR LAYERS ON SILICON CARBIDE SUBSTRATES BY LATERAL GROWTH FROM SIDEWALLS OF MASKED POSTS, AND GALLIUM NITRIDE SEMICONDUCTOR STRUCTURES FABRICATED THEREBY | Electricity | 40 | Expired |
| US7365374B2 | Gallium nitride material structures including substrates and methods associated with the same | Electricity | 37 | Expired |
| US6462355B1 | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates | Electricity | 35 | Expired |
| US7135720B2 | Gallium nitride material transistors and methods associated with the same | Electricity | 26 | Expired |
| US7339205B2 | Gallium nitride materials and methods associated with the same | Electricity | 26 | Expired |
| US7745848B1 | Gallium nitride material devices and thermal designs thereof | Electricity | 26 | Active |
| US7352016B2 | Gallium nitride material transistors and methods associated with the same | Electricity | 16 | Active |
| US7687827B2 | III-nitride materials including low dislocation densities and methods associated with the same | Electricity | 15 | Expired |
| US7791106B2 | Gallium nitride material structures including substrates and methods associated with the same | Electricity | 14 | Active |
| US7352015B2 | Gallium nitride materials and methods associated with the same | Electricity | 11 | Expired |
| US7378684B2 | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates | Electricity | 3 | Expired |
| US8748298B2 | Gallium nitride materials and methods associated with the same | Electricity | 2 | Active |
| US7569871B2 | Gallium nitride material transistors and methods associated with the same | Electricity | 2 | Active |
| US7994540B2 | Gallium nitride material transistors and methods associated with the same | Electricity | 1 | Active |
| US10096701B2 | Gallium nitride materials and methods associated with the same | Electricity | 0 | Active |
| US8368117B2 | III-nitride materials including low dislocation densities and methods associated with the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.