Imaging array utilizing thyristor-based pixel elements
US7247892B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Oct 20, 2003 |
| Grant date | Jul 24, 2007 |
| Priority date | — |
| Expiry date | Feb 5, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-type modulation doped quantum well interfaces that are spaced apart from one another. Incident radiation within a predetermined wavelength resonates within the cavity of a given pixel element for absorption therein that causes charge accumulation. The accumulated charge is related to the intensity of the incident radiation. The heterojunction-thyristor-based pixel element is suitable for many imaging applications, including CCD-based imaging arrays and active-pixel imaging arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.