ALD method and apparatus
US7250083B2 · kind B2 · utility
65Cited by
21References
43Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 7, 2003 |
| Grant date | Jul 31, 2007 |
| Priority date | — |
| Expiry date | Sep 3, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45534
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substrates and devices that are moisture- and oxygen-sensitive. ALD films, such as oxides, nitrides, semiconductors and metals, are efficiently and cost-effectively deposited from conventional metal precursors and activated nonmetal sources. Additionally, substrate preparation methods for optimized ALD are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.