Ofer Sneh
37Patents
20h-index
14Co-inventors
82Inventor score
Filing activity: Jun 19, 1997 → Dec 14, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6200893A | Radical-assisted sequential CVD | Electricity | 577 | Expired |
| US6911092B2 | ALD apparatus and method | Emerging Cross-Sectional Technologies | 534 | Expired |
| US7682454B2 | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems | Electricity | 506 | Expired |
| US6503330B1 | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition | Chemistry; Metallurgy | 463 | Expired |
| US6540838B2 | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition | Electricity | 391 | Expired |
| US6305314A | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition | Electricity | 363 | Expired |
| US6090442A | Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry | Chemistry; Metallurgy | 352 | Expired |
| US6451695B2 | Radical-assisted sequential CVD | Electricity | 292 | Expired |
| US6451119B2 | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition | Electricity | 251 | Expired |
| US6475910B1 | Radical-assisted sequential CVD | Electricity | 208 | Expired |
| US6638859B2 | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition | Chemistry; Metallurgy | 117 | Expired |
| US6551399B1 | Fully integrated process for MIM capacitors using atomic layer deposition | Electricity | 93 | Expired |
| US6602784B2 | Radical-assisted sequential CVD | Electricity | 65 | Expired |
| US7250083B2 | ALD method and apparatus | Chemistry; Metallurgy | 65 | Expired |
| US6617173B1 | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition | Electricity | 46 | Expired |
| US6638862B2 | Radical-assisted sequential CVD | Electricity | 32 | Expired |
| US7662233B2 | ALD apparatus and method | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6630401B2 | Radical-assisted sequential CVD | Electricity | 27 | Expired |
| US6897508B2 | Integrated capacitor with enhanced capacitance density and method of fabricating same | Electricity | 27 | Expired |
| US8083205B2 | Fail safe pneumatically actuated valve with fast time response and adjustable conductance | Emerging Cross-Sectional Technologies | 22 | Active |
| US6863021B2 | Method and apparatus for providing and integrating a general metal delivery source (GMDS) with atomic layer deposition (ALD) | Chemistry; Metallurgy | 20 | Expired |
| US6897119B1 | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition | Chemistry; Metallurgy | 19 | Expired |
| US5949944A | Apparatus and method for dissipating charge from lithium niobate devices | Physics | 17 | Expired |
| US7744060B2 | Fail-safe pneumatically actuated valve with fast time response and adjustable conductance | Emerging Cross-Sectional Technologies | 16 | Expired |
| US8451582B2 | Capacitors with high energy storage density and low ESR | Emerging Cross-Sectional Technologies | 14 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.